Description The module is designed for both Industrial and commercial applications. The latest device technologies and design methods are
1.RF DATA Item Spec. Remarks Frequency Range 300-400MHz Bandwidth Range±10MHz Frequency Range 400-500 MHz Bandwidth Range±10MHz
26.5 – 40GHz Broadband RF Power Amplifiers for millimeter-wave communications Description The module is
Description The module is designed for both military and commercial applications. The latest device technologies and design methods are
EMC High Power Amplifier 3-6 GHz Psat 100 W Wideband Power Amplifier Description The
3 -18 GHz Psat 42dB Wideband RF Power Amplifier High Power Amplifier for measurement, and
Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Typical performance at 28V DC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER
100W Module Technical Datasheet RF DATA Item Spec. Remarks Frequency Range 300-400MHz Bandwidth Range±10MHz
Description The module is designed for commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification
Main Technical Specifications Parameter Code Min TYP Max Unit Operating Frequency BW 2.45 GHz Saturated
Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Typical performance at +28 VDC +25oC, and in a 50Ω system. RF
Description The module is designed for both military and commercial applications. The latest device technologies and design methods are